By Moumita Mukherjee
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Additional info for Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems
Fig. 8. 5 s in width) and the voltage variation through the VO2 switch (in series with a resistor having RS= 278 ) showing installation of the VO2's SMT with activation times which varies between 100 and 250 ns. As indicated in Fig. 8 b, c, preliminary results indicate switching times values as low as several hundreds of nano-seconds, which are, however, situated well above the electronically induced VO2 transition (supposed to occur in the ps domain). Exploiting the semiconductor-metal phase transition of VO2 materials: a novel direction towards tuneable devices and systems for RFmicrowave applications 45 Although the theoretical calculations for a current-induced temperature initiation of the SMT transition (by the Joule heating effect) on the tested device lies in the order of the micro-second scale time (higher than the switching times we recorded), it is prematurely to asses on a purely electrical-induced phase transition (by charge injection).
For example, the jet is not “cutting plasma”, it is not a liquefied or molten metal jet, the jet temperature is not 20,000 C, and the density of the jet is not several times that of steel, etc. . The main physical problems today in applications to plasma antenna design are as follows. Why do alloys not perform as well as pure metals (with a few exceptions)? Along these same lines, it is known that fine grain liner materials perform better than coarse grain materials. What is the optimum grain size (for materials other than copper, where fine grain liners perform better than coarse grain liners )?
Lavrent’ev M. (1957). The shaped charge and principles of it operations. Uspehi matem. Nauk (in Russian). Vol. 41-56. 20. V. (2003). New criterion of cumulative jet formation. 7th Korea-Russia International Symposium on Science and Technology "KORUS 2003",June 29-July 2, 2003. 3, Pages: 93 – 94. 21. Minin. Criterium of jet formation for the axisymmetrical shaped charge//Izvestia Vuzov, Povoljskii region, 2006, № 6 (27), pp. 380-389 (in Russian). 22. ; Kristiansen, M. (2002). Feasibility study of an explosively formed transient antenna.
Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems by Moumita Mukherjee